IPB011N04N G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-7

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

180 A

Rds On - Drain-Source Resistance:

1.1 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

250 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

63 ns

Typical Turn-On Delay Time:

40 ns

Part # Aliases:

IPB011N04NGATMA1 IPB11N4NGXT SP000388298

Unit Weight:

0.056438 oz

Tags

IPB011N04NG, IPB011N04N, IPB011, IPB01, IPB0, IPB