IXTP1N80P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

1 A

Rds On - Drain-Source Resistance:

10 Ohms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

42 W

Configuration:

Single

Packaging:

Tube

Series:

IXTP1N80

Transistor Type:

1 N-Channel

Brand:

IXYS

Product Type:

MOSFET

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Unit Weight:

0.081130 oz

Tags

IXTP1N, IXTP1, IXTP, IXT