AFV10700HSR5

AFV10700HSR5 Overview

This product is manufactured by NXP. 2.6 A continuous drain current Vds rating of - 500 mV, 105 V 19.2 dB is 11.5 dB. Output power: 700 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-780S-4 package/case type is utilized by this product. Reel packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 526 W RF MOSFET Transistors product type 50 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V This product is also known by the 935346524178 number of 934069005115. 1. 0.228922 oz of Unit Weight

AFV10700HSR5 Image

AFV10700HSR5 Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• RoHS: Y
• Transistor Polarity: Dual N-Channel
• Technology: Si
• Id - Continuous Drain Current: 2.6 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
• Gain: 19.2 dB
• Output Power: 700 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: NI-780S-4
• Packaging: Reel
• Operating Frequency: 1030 MHz to 1090 MHz
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 526 W
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 50
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 1.3 V
• Part # Aliases: 935346524178
• Unit Weight: 0.228922 oz

AFV10700HSR5 FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is NXP.

• A: Is the cutoff frequency of the product Id - Continuous Drain Current?

  Q: Yes, the product's Id - Continuous Drain Current is indeed 2.6 A

• A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

  Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 105 V.

• A: At what frequency does the Gain?

  Q: The product Gain is 19.2 dB.

• A: What is the Output Power of the product?

  Q: The Output Power of the product is 700 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is SMD/SMT.

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is NI-780S-4.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Reel.

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: What is the Brand of the product?

  Q: The Brand of the product is NXP Semiconductors.

• A: What is the Number of Channels of the product?

  Q: The Number of Channels of the product is 2 Channel.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 526 W.

• A: At what frequency does the Product Type?

  Q: The product Product Type is RF MOSFET Transistors.

• A: At what frequency does the Factory Pack Quantity?

  Q: The product Factory Pack Quantity is 50.

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed MOSFETs

• A: What is the Vgs - Gate-Source Voltage of the product?

  Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.

• A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

  Q: The product Vgs th - Gate-Source Threshold Voltage is 1.3 V.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 935346524178.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.228922 oz.