PRF13750HR9

Mfr. #: PRF13750HR9
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors Pre- Production RF transistor 915MHz
Lifecycle: New from this manufacturer.
Datasheet: PRF13750HR9 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PRF13750HR9 Specifications
  • Manufacturer: NXP
  • Product Category: RF MOSFET Transistors
  • RoHS: Y
  • Transistor Polarity: N-Channel
  • Technology: Si
  • Id - Continuous Drain Current: 2.8 A
  • Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
  • Gain: 19.5 dB
  • Output Power: 750 W
  • Minimum Operating Temperature: - 40 C
  • Maximum Operating Temperature: + 150 C
  • Mounting Style: SMD/SMT
  • Package / Case: NI-1230H-4S-4
  • Operating Frequency: 0.7 GHz to 1.3 GHz
  • Series: MRF13750H
  • Type: RF Power MOSFET
  • Brand: NXP Semiconductors
  • Number of Channels: 2 Channel
  • Product Type: RF MOSFET Transistors
  • Subcategory: MOSFETs
  • Vgs - Gate-Source Voltage: - 6 V, 10 V
  • Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9

PRF13750HR9 Specifications

PRF13750HR9 FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is NXP.

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 2.8 A

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed - 500 mV, 105 V

  • A: At what frequency does the Gain?

    Q: The product Gain is 19.5 dB.

  • A: At what frequency does the Output Power?

    Q: The product Output Power is 750 W.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 40 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is NI-1230H-4S-4.

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: At what frequency does the Brand?

    Q: The product Brand is NXP Semiconductors.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 2 Channel.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is RF MOSFET Transistors.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed MOSFETs

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.3 V

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