| Mfr. #: | STGW60H65DRF |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | IGBT Transistors 60A 650V Field Stop Trench Gate IBGT |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STGW60H65DRF Datasheet |
This product is manufactured by STMicroelectronics. TO-247 package/case type is utilized by this product. The product can operate at a maximum temperature of SMD/SMT. The maximum 650 V. The 1.9 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 360 W Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.229281 oz of Unit Weight
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STGW60H65DRF Specifications
A: At what frequency does the Manufacturer?
Q: The product Manufacturer is STMicroelectronics.
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-247.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?
Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V
A: At what frequency does the Collector-Emitter Saturation Voltage?
Q: The product Collector-Emitter Saturation Voltage is 1.9 V.
A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?
Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V
A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?
Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 360 W
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Brand of the product?
Q: The Brand of the product is STMicroelectronics.
A: Is the cutoff frequency of the product Gate-Emitter Leakage Current?
Q: Yes, the product's Gate-Emitter Leakage Current is indeed 250 nA
A: At what frequency does the Product Type?
Q: The product Product Type is IGBT Transistors.
A: Is the cutoff frequency of the product Factory Pack Quantity?
Q: Yes, the product's Factory Pack Quantity is indeed 600
A: At what frequency does the Subcategory?
Q: The product Subcategory is IGBTs.
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.229281 oz