STGWA80H65DFB

Mfr. #: STGWA80H65DFB
Manufacturer: STMicroelectronics
Description: IGBT Transistors IGBT & Power Bipolar
Lifecycle: New from this manufacturer.
Datasheet: STGWA80H65DFB Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA80H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.3 mm. 20.3 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGWA80H65DFB Image

STGWA80H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA80H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 2 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Pd - Power Dissipation: 469 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA80H65DFB
  • Continuous Collector Current Ic Max: 80 A
  • Height: 5.3 mm
  • Length: 20.3 mm
  • Operating Temperature Range: - 55 C to + 175 C
  • Width: 15.9 mm
  • Brand: STMicroelectronics
  • Continuous Collector Current: 120 A
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGWA80H65DFB

STGWA80H65DFB Specifications

STGWA80H65DFB FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-247-3

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is Through Hole.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Collector- Emitter Voltage VCEO Max of the product?

    Q: The Collector- Emitter Voltage VCEO Max of the product is 650 V.

  • A: What is the Collector-Emitter Saturation Voltage of the product?

    Q: The Collector-Emitter Saturation Voltage of the product is 2 V.

  • A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

    Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

    Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 469 W.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 175 C.

  • A: What is the Continuous Collector Current Ic Max of the product?

    Q: The Continuous Collector Current Ic Max of the product is 80 A.

  • A: What is the Height of the product?

    Q: The Height of the product is 5.3 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 20.3 mm.

  • A: What is the Brand of the product?

    Q: The Brand of the product is STMicroelectronics.

  • A: What is the Gate-Emitter Leakage Current of the product?

    Q: The Gate-Emitter Leakage Current of the product is 250 nA.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is IGBT Transistors.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 600.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed IGBTs

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 1.340411 oz

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