| Mfr. #: | CSD13201W10 |
|---|---|
| Manufacturer: | Texas Instruments |
| Description: | Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | CSD13201W10 Datasheet |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 4-UFBGA, DSBGA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 4-DSBGA (1x1) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 12V This product has an 462pF @ 6V value of 300pF @ 25V. This product's Standard. 1.6A (Ta) continuous drain-ID current at 25°C; This product has an 34 mOhm @ 1A, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 1.2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9.7 ns of 16 ns. This product has a 5.9 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 1.6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 34 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 14.4 ns This product has a 3.9 ns. Qg-Gate-Charge is 2.3 nC. This product features a 23 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD13201W10 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 4-UFBGA, DSBGA.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 4-DSBGA (1x1).
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 12V
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 462pF @ 6V
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 1.6A (Ta).
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 34 mOhm @ 1A, 4.5V.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1.2 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 9.7 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 5.9 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 8 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1.6 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 12 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 800 mV.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 34 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 14.4 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 3.9 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 2.3 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 23 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.