CSD13383F4T

Mfr. #: CSD13383F4T
Manufacturer: Texas Instruments
Description: IGBT Transistors MOSFET 12V N-Channel FemtoFET MOSFET
Lifecycle: New from this manufacturer.
Datasheet: CSD13383F4T Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13383F4T Overview

Product belongs to the CSD13383F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. SMD-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 315 ns of 16 ns. This product has a 123 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 2.9 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 44 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 96 ns This product has a 39 ns. Qg-Gate-Charge is 2 nC. This product features a 5.4 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD13383F4T Image

CSD13383F4T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13383F4T Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD13383F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename FemtoFET
  • Package-Case SMD-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 315 ns
  • Rise-Time 123 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 2.9 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1 V
  • Rds-On-Drain-Source-Resistance 44 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 96 ns
  • Typical-Turn-On-Delay-Time 39 ns
  • Qg-Gate-Charge 2 nC
  • Forward-Transconductance-Min 5.4 S
  • Channel-Mode Enhancement

CSD13383F4T

CSD13383F4T Specifications

CSD13383F4T FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD13383F4.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is FemtoFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed SMD-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 315 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 123 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 10 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 2.9 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 44 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 96 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 39 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 2 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 5.4 S

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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