| Mfr. #: | CSD16406 |
|---|---|
| Manufacturer: | Texas Instruments |
| Description: | |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | CSD16406 Datasheet |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (5x6) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1100pF @ 12.5V value of 300pF @ 25V. This product's Standard. 19A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 5.3 mOhm @ 20A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4.8 ns of 16 ns. This product has a 12.9 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 19 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.7 V Vgs-th gate-source threshold voltage for efficient power management. The 5.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 8.5 ns This product has a 7.3 ns. Qg-Gate-Charge is 5.8 nC. This product features a 53 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD16406 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed NexFET
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: At what frequency does the Tradename?
Q: The product Tradename is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 8-PowerTDFN.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 8-VSON (5x6).
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 25V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 1100pF @ 12.5V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 19A (Ta), 60A (Tc).
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 5.3 mOhm @ 20A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2.7 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 4.8 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 12.9 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 19 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 25 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.7 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 5.9 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 8.5 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 7.3 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 5.8 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 53 S.
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.