CSD17308Q3

CSD17308Q3 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 700pF @ 15V value of 300pF @ 25V. This product's Standard. 13A (Ta), 47A (Tc) continuous drain-ID current at 25°C; This product has an 10.3 mOhm @ 10A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2.3 ns of 16 ns. This product has a 5.7 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.3 V Vgs-th gate-source threshold voltage for efficient power management. The 9.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 3.9 nC. This product features a 37 S of 500 S for high performance.

CSD17308Q3 Image

CSD17308Q3 Specifications

• Manufacturer TI
• Product Category FETs - Single
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-PowerTDFN
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package 8-VSON (3.3x3.3)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 2.7W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 30V
• Input-Capacitance-Ciss-Vds 700pF @ 15V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 13A (Ta), 47A (Tc)
• Rds-On-Max-Id-Vgs 10.3 mOhm @ 10A, 8V
• Vgs-th-Max-Id 1.8V @ 250μA
• Gate-Charge-Qg-Vgs 5.1nC @ 4.5V
• Pd-Power-Dissipation 2.7 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2.3 ns
• Rise-Time 5.7 ns
• Vgs-Gate-Source-Voltage 10 V
• Id-Continuous-Drain-Current 13 A
• Vds-Drain-Source-Breakdown-Voltage 30 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.3 V
• Rds-On-Drain-Source-Resistance 9.4 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 3.9 nC
• Forward-Transconductance-Min 37 S

CSD17308Q3 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is NexFET.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Digi-ReelR Alternate Packaging.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is 8-PowerTDFN.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is 8-VSON (3.3x3.3).

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 30V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 700pF @ 15V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 13A (Ta), 47A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 10.3 mOhm @ 10A, 8V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 2.7 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 2.3 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 5.7 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 10 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 13 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.3 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 9.4 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 3.9 nC.

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 37 S