| Mfr. #: | CSD19506KCS |
|---|---|
| Manufacturer: | Texas Instruments |
| Description: | Darlington Transistors MOSFET 80V N-CH Power MOSFET |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | CSD19506KCS Datasheet |


Product belongs to the CSD19506KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 375 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 273 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 19 ns. Qg-Gate-Charge is 120 nC. This product features a 297 S of 500 S for high performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19506KCS Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed CSD19506KCS
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.211644 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Tradename?
Q: Yes, the product's Tradename is indeed NexFET
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 375 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 10 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 11 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 273 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 2.2 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 30 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 19 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 120 nC
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 297 S.