CSD25310Q2

Mfr. #: CSD25310Q2
Manufacturer: Texas Instruments
Description: Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R
Lifecycle: New from this manufacturer.
Datasheet: CSD25310Q2 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25310Q2 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 6-WDFN Exposed Pad Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) * mounting type Number of channels: 1 Channel Supplier device package: 6-WSON (2x2) Configuration Single Channel This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 20V This product has an 655pF @ 10V value of 300pF @ 25V. This product's Standard. 20A (Ta) continuous drain-ID current at 25°C; This product has an 23.9 mOhm @ 5A, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 2.9 W Maximum operating temperature of + 85 C Minimum operating temperature: - 40 C This product has a 5 ns of 16 ns. This product has a 15 ns of 16 ns. This product's - 8 V. The ID of continuous drain current is - 9.6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 23.9 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 15 ns This product has a 8 ns. Qg-Gate-Charge is 3.6 nC. This product features a 34 S of 500 S for high performance.

CSD25310Q2 Image

CSD25310Q2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25310Q2 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 6-WDFN Exposed Pad
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type *
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 6-WSON (2x2)
  • Configuration Single Channel
  • FET-Type MOSFET P-Channel, Metal Oxide
  • Power-Max 2.9W
  • Transistor-Type 1 P-Channel
  • Drain-to-Source-Voltage-Vdss 20V
  • Input-Capacitance-Ciss-Vds 655pF @ 10V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 20A (Ta)
  • Rds-On-Max-Id-Vgs 23.9 mOhm @ 5A, 4.5V
  • Vgs-th-Max-Id 1.1V @ 250μA
  • Gate-Charge-Qg-Vgs 4.7nC @ 4.5V
  • Pd-Power-Dissipation 2.9 W
  • Maximum-Operating-Temperature + 85 C
  • Minimum-Operating-Temperature - 40 C
  • Fall-Time 5 ns
  • Rise-Time 15 ns
  • Vgs-Gate-Source-Voltage - 8 V
  • Id-Continuous-Drain-Current - 9.6 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 850 mV
  • Rds-On-Drain-Source-Resistance 23.9 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 15 ns
  • Typical-Turn-On-Delay-Time 8 ns
  • Qg-Gate-Charge 3.6 nC
  • Forward-Transconductance-Min 34 S

CSD25310Q2

CSD25310Q2 Specifications

CSD25310Q2 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 6-WDFN Exposed Pad.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is *.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 6-WSON (2x2).

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single Channel.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET P-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 P-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 20V

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 655pF @ 10V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 20A (Ta).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 23.9 mOhm @ 5A, 4.5V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 2.9 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 85 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 5 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 15 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is - 8 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is - 9.6 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 20 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed - 850 mV

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 23.9 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is P-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 15 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 8 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 3.6 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 34 S.

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