CSD85302L

CSD85302L Overview

Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style 4-XFLGA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 4-Picostar (1.31x1.31) Configuration Dual This product uses an 2 N-Channel (Dual) Common Drain FET-Type transistor. Transistor type: 2 N-Channel - This product has an - value of 300pF @ 25V. This product's Standard. - continuous drain-ID current at 25°C; This product has an - of 12 Ohm @ 150mA, 0V. Power-off control: 1.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 99 ns of 16 ns. This product has a 54 ns of 16 ns. This product's +/- 10 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 20 V. This product has a 680 mV Vgs-th gate-source threshold voltage for efficient power management. The 36 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 173 ns This product has a 37 ns. Qg-Gate-Charge is 6 nC. This product operates in Enhancement channel mode for optimal performance.

CSD85302L Image

CSD85302L Specifications

• Manufacturer
• Product Category FETs - Arrays
• Series NexFET
• Packaging Tape & Reel (TR) Alternate Packaging
• Mounting-Style SMD/SMT
• Package-Case 4-XFLGA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 4-Picostar (1.31x1.31)
• Configuration Dual
• FET-Type 2 N-Channel (Dual) Common Drain
• Power-Max 1.7W
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss -
• Input-Capacitance-Ciss-Vds -
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C -
• Rds-On-Max-Id-Vgs -
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs 7.8nC @ 4.5V
• Pd-Power-Dissipation 1.7 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 99 ns
• Rise-Time 54 ns
• Vgs-Gate-Source-Voltage +/- 10 V
• Id-Continuous-Drain-Current 7 A
• Vds-Drain-Source-Breakdown-Voltage 20 V
• Vgs-th-Gate-Source-Threshold-Voltage 680 mV
• Rds-On-Drain-Source-Resistance 36 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 173 ns
• Typical-Turn-On-Delay-Time 37 ns
• Qg-Gate-Charge 6 nC
• Channel-Mode Enhancement

CSD85302L FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed NexFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tape & Reel (TR) Alternate Packaging.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed 4-XFLGA

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 2 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is 4-Picostar (1.31x1.31).

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Dual.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is 2 N-Channel (Dual) Common Drain.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 2 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is -.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is -.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed -

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is -.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 1.7 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 99 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 54 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is +/- 10 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 7 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 20 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 680 mV.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 36 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 173 ns

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 37 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 6 nC.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.