CSD86330Q3D

Mfr. #: CSD86330Q3D
Manufacturer: Texas Instruments
Description: Synchronous Buck Power Block 8-Pin SON EP T/R
Lifecycle: New from this manufacturer.
Datasheet: CSD86330Q3D Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD86330Q3D Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerLDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-LSON (5x6) Configuration Dual This product uses an 2 N-Channel (Half Bridge) FET-Type transistor. Transistor type: 2 N-Channel 25V This product has an 920pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 9.6 mOhm @ 14A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 10 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V 25 V. The 8.8 mOhms 3.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. The CSD86330EVM-717.

CSD86330Q3D Image

CSD86330Q3D

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD86330Q3D Specifications
  • Manufacturer Texas Instruments
  • Product Category IC Chips
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerLDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 2 Channel
  • Supplier-Device-Package 8-LSON (5x6)
  • Configuration Dual
  • FET-Type 2 N-Channel (Half Bridge)
  • Power-Max 6W
  • Transistor-Type 2 N-Channel
  • Drain-to-Source-Voltage-Vdss 25V
  • Input-Capacitance-Ciss-Vds 920pF @ 12.5V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 20A
  • Rds-On-Max-Id-Vgs 9.6 mOhm @ 14A, 8V
  • Vgs-th-Max-Id 2.1V @ 250μA
  • Gate-Charge-Qg-Vgs 6.2nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 20 A 20 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V 25 V
  • Rds-On-Drain-Source-Resistance 8.8 mOhms 3.3 mOhms
  • Transistor-Polarity N-Channel
  • Development-Kit CSD86330EVM-717

CSD86330Q3D

CSD86330Q3D Specifications

CSD86330Q3D FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is 8-PowerLDFN.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 2 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-LSON (5x6)

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is 2 N-Channel (Half Bridge).

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 2 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 25V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 920pF @ 12.5V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Logic Level Gate.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 20A.

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 9.6 mOhm @ 14A, 8V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 6 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 20 A 20 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V 25 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.8 mOhms 3.3 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Development-Kit?

    Q: Yes, the product's Development-Kit is indeed CSD86330EVM-717

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