| Mfr. #: | CSD88539ND |
|---|---|
| Manufacturer: | Texas Instruments |
| Description: | MOSFET 2N-CH 60V 15A 8SOIC |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | CSD88539ND Datasheet |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.019048 oz SMD/SMT Mounting-Style Trade name: NexFET. 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SOIC Configuration Dual This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 60V This product has an 741pF @ 30V value of 300pF @ 25V. This product's Standard. 15A continuous drain-ID current at 25°C; This product has an 28 mOhm @ 5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4 ns of 16 ns. This product has a 9 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 11.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 23 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 7.2 nC. This product features a 19 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD88539ND Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.019048 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-SOIC (0.154", 3.90mm Width).
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 2 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 8-SOIC.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual
A: What is the FET-Type of the product?
Q: The FET-Type of the product is 2 N-Channel (Dual).
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 2 N-Channel
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.
A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?
Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 741pF @ 30V
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 15A.
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 28 mOhm @ 5A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2.1 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 4 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 9 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 11.7 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 60 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 23 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 7.2 nC
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 19 S.