LND150N8-G

LND150N8-G Overview

Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.001862 oz SMD/SMT Mounting-Style TO-243AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-89-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 500V This product has an 10pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 30mA (Tj) continuous drain-ID current at 25°C; This product has an 1000 Ohm @ 500μA, 0V of 12 Ohm @ 150mA, 0V. Power-off control: 1.2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 450 ns of 16 ns. This product has a 450 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 30 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 1 kOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 100 ns This product has a 90 ns. This product operates in Depletion channel mode for optimal performance.

LND150N8-G Image

LND150N8-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.001862 oz
• Mounting-Style SMD/SMT
• Package-Case TO-243AA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package SOT-89-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 1.6W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 500V
• Input-Capacitance-Ciss-Vds 10pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 30mA (Tj)
• Rds-On-Max-Id-Vgs 1000 Ohm @ 500μA, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 1.2 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 450 ns
• Rise-Time 450 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 30 mA
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Rds-On-Drain-Source-Resistance 1 kOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 100 ns
• Typical-Turn-On-Delay-Time 90 ns
• Channel-Mode Depletion

LND150N8-G FAQ

• A: At what frequency does the Series?

  Q: The product Series is -.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.001862 oz

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-243AA.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed SOT-89-3

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 500V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 10pF @ 25V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Depletion Mode.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 30mA (Tj).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 1000 Ohm @ 500μA, 0V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 1.2 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 450 ns

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 450 ns

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 30 mA.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 1 kOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 100 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 90 ns.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Depletion