| Mfr. #: | STAC250V2-500E |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | RF MOSFET Transistors POWER R.F. |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STAC250V2-500E Datasheet |
Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style STAC177B Si is the technology used. The device offers a 23 dB of 26dB. Maximum operating temperature of + 150 C The operating frequency is 27 MHz. This product's 20 V. The ID of continuous drain current is 1 uA. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STAC250V2-500E Specifications
A: At what frequency does the Type?
Q: The product Type is RF Power MOSFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Bulk
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is STAC177B.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Gain?
Q: The product Gain is 23 dB.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Operating-Frequency of the product?
Q: The Operating-Frequency of the product is 27 MHz.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 1 uA
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 900 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel