| Mfr. #: | STB155N3H6 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-CH 30V 80A D2PAK |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STB155N3H6 Datasheet |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 900 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 3.6 A; The Rds On - Drain-Source Resistance of the product is 3.7 Ohms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 30 ns - 55 C minimum operating temperature The power dissipation is 125 W. 25 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 90 ns; The 14 ns typical turn-on delay time The Unit Weight is 1.340411 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB155N3H6 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-247-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 900 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 3.6 A
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 3.7 Ohms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 20 V
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 30 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 125 W
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 25 ns
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 90 ns
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 14 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 1.340411 oz.