STB20NM50FDT4

STB20NM50FDT4 Overview

Product belongs to the STB20NM50FD series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 192 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C This product has a 15 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 250 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. This product has a 22 ns. Qg-Gate-Charge is 38 nC. This product operates in Enhancement channel mode for optimal performance.

STB20NM50FDT4 Image

STB20NM50FDT4 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series STB20NM50FD
• Packaging Reel
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 192 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Fall-Time 15 ns
• Rise-Time 20 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 20 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Rds-On-Drain-Source-Resistance 250 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-On-Delay-Time 22 ns
• Qg-Gate-Charge 38 nC
• Channel-Mode Enhancement

STB20NM50FDT4 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed STB20NM50FD

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.139332 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-252-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 192 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 65 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 15 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 20 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 20 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 250 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 22 ns

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 38 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement