STB21N65M5

Mfr. #: STB21N65M5
Manufacturer: STMicroelectronics
Description: IGBT Transistors MOSFET POWER MOSFET N-CH 650V
Lifecycle: New from this manufacturer.
Datasheet: STB21N65M5 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB21N65M5 Overview

Product belongs to the MDmesh M5 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Power-off control: 125 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 10 ns of 16 ns. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 190 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 50 nC.

STB21N65M5 Image

STB21N65M5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB21N65M5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M5
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Pd-Power-Dissipation 125 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 12 ns
  • Rise-Time 10 ns
  • Id-Continuous-Drain-Current 17 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 190 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 50 nC

STB21N65M5

STB21N65M5 Specifications

STB21N65M5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed MDmesh M5

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 125 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 12 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 10 ns

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 17 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 190 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 50 nC

1680 In Stock
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Quantity
Unit Price
Ext. Price
1
$2.88
$2.88
10
$2.74
$27.37
100
$2.59
$259.26
500
$2.45
$1 224.30
1000
$2.30
$2 304.50
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