STB45N50DM2AG

STB45N50DM2AG Overview

Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 9.8 ns of 16 ns. This product has a 9.4 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 84 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 73.5 ns This product has a 20 ns. Qg-Gate-Charge is 57 nC. This product operates in Enhancement channel mode for optimal performance.

STB45N50DM2AG Image

STB45N50DM2AG Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Pd-Power-Dissipation 250 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 9.8 ns
• Rise-Time 9.4 ns
• Vgs-Gate-Source-Voltage +/- 25 V
• Id-Continuous-Drain-Current 35 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 84 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 73.5 ns
• Typical-Turn-On-Delay-Time 20 ns
• Qg-Gate-Charge 57 nC
• Channel-Mode Enhancement

STB45N50DM2AG FAQ

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.139332 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-252-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 250 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 9.8 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 9.4 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is +/- 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 35 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 84 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 73.5 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 20 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 57 nC.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.