| Mfr. #: | STB80NF55L-06T4 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | RF Bipolar Transistors MOSFET N-Ch, 55V-0.005ohms 80A |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STB80NF55L-06T4 Datasheet |
RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 55 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 16 V. Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 80 ns - 55 C minimum operating temperature The power dissipation is 300 W. 180 ns Rise Time Product belongs to the STB80NF55L series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 135 ns; The 32 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB80NF55L-06T4 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-252-3
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 55 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 80 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 6.5 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 16 V
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 175 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 80 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 300 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 180 ns.
A: At what frequency does the Series?
Q: The product Series is STB80NF55L.
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 135 ns
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 32 ns.
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.139332 oz