| Mfr. #: | STF10LN80K5 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-CH 800V 8A TO-220FP |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STF10LN80K5 Datasheet |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 5 A; The Rds On - Drain-Source Resistance of the product is 1.15 Ohms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 17.4 ns - 55 C minimum operating temperature The power dissipation is 85 W. 6.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 23.6 ns; The 9.3 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF10LN80K5 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed IPAK-3
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 800 V
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 5 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 1.15 Ohms.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is +/- 30 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 12 nC.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 17.4 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 85 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 6.7 ns
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 23.6 ns
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 9.3 ns.