| Mfr. #: | STFI9N80K5 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-CH 800V 7A I2PAKFP |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STFI9N80K5 Datasheet |
RoHS compliant with Details Input bias current of Through Hole Package type is I2PAKFP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 7 A; The Rds On - Drain-Source Resistance of the product is 900 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 30 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 12 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 13.6 ns - 55 C minimum operating temperature The power dissipation is 25 W. 5.7 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 65.3 ns; The 11 ns typical turn-on delay time
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STFI9N80K5 Specifications
A: Is the cutoff frequency of the product RoHS?
Q: Yes, the product's RoHS is indeed Details
A: At what frequency does the Mounting Style?
Q: The product Mounting Style is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is I2PAKFP-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: What is the Transistor Polarity of the product?
Q: The Transistor Polarity of the product is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 800 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 7 A
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 900 mOhms
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 30 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 12 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 13.6 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 25 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 5.7 ns.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 65.3 ns
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 11 ns.