| Mfr. #: | STH180N10F3-2 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-CH 100V 120A H2PAK |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STH180N10F3-2 Datasheet |
Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 315 W This product has a 6.9 ns of 16 ns. This product has a 97.1 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 4.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 114.6 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STH180N10F3-2 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel STripFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.139332 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-252-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 315 W.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 6.9 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 97.1 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 120 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 4.5 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 114.6 nC