STL19N60DM2

Mfr. #: STL19N60DM2
Manufacturer: STMicroelectronics
Description: N-CHANNEL 600 V, 0.28 OHM TYP.,
Lifecycle: New from this manufacturer.
Datasheet: STL19N60DM2 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL19N60DM2 Overview

SMD/SMT Mounting-Style DFN-8 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Transistor type: 1 N-Channel Power-off control: 90 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a - of 16 ns. This product has a - of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 320 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of - This product has a -. Qg-Gate-Charge is 21 nC. This product features a - of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.

STL19N60DM2 Image

STL19N60DM2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL19N60DM2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Mounting-Style SMD/SMT
  • Package-Case DFN-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration 1 N-Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 90 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time -
  • Rise-Time -
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 11 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 320 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time -
  • Typical-Turn-On-Delay-Time -
  • Qg-Gate-Charge 21 nC
  • Forward-Transconductance-Min -
  • Channel-Mode Enhancement
  • Development-Kit -

STL19N60DM2

STL19N60DM2 Specifications

STL19N60DM2 FAQ
  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed DFN-8

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed 1 N-Channel

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 90 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed -

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is -.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 11 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 320 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed -

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed -

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 21 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is -.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Development-Kit?

    Q: Yes, the product's Development-Kit is indeed -

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