STL70N10F3

Mfr. #: STL70N10F3
Manufacturer: STMicroelectronics
Description: IGBT Transistors MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS
Lifecycle: New from this manufacturer.
Datasheet: STL70N10F3 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STL70N10F3 Overview

Product belongs to the STL70N10F3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Power-off control: 136 W This product has a 5.7 ns of 16 ns. This product has a 11 ns of 16 ns. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 8.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17 ns. Qg-Gate-Charge is 56 nC. This product operates in Enhancement channel mode for optimal performance.

STL70N10F3 Image

STL70N10F3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STL70N10F3 Specifications
  • Manufacturer ST
  • Product Category IC Chips
  • Series STL70N10F3
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Package-Case PowerFlat-8
  • Technology Si
  • Pd-Power-Dissipation 136 W
  • Fall-Time 5.7 ns
  • Rise-Time 11 ns
  • Id-Continuous-Drain-Current 16 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 8.4 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 43 ns
  • Typical-Turn-On-Delay-Time 17 ns
  • Qg-Gate-Charge 56 nC
  • Channel-Mode Enhancement

STL70N10F3

STL70N10F3 Specifications

STL70N10F3 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is STL70N10F3.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is PowerFlat-8.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 136 W.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 5.7 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 11 ns

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 16 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.4 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 43 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 56 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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