STN1NK60Z

STN1NK60Z Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.004395 oz SMD/SMT Mounting-Style TO-261-4, TO-261AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: SOT-223 Configuration Single Dual Drain This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 600V This product has an 94pF @ 25V value of 300pF @ 25V. This product's Standard. 300mA (Tc) continuous drain-ID current at 25°C; This product has an 15 Ohm @ 400mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 3.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 300 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 15 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 5.5 ns. Qg-Gate-Charge is 4.9 nC. This product features a 0.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STN1NK60Z Image

STN1NK60Z Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series SuperMESH
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.004395 oz
• Mounting-Style SMD/SMT
• Package-Case TO-261-4, TO-261AA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package SOT-223
• Configuration Single Dual Drain
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 3.3W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 600V
• Input-Capacitance-Ciss-Vds 94pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 300mA (Tc)
• Rds-On-Max-Id-Vgs 15 Ohm @ 400mA, 10V
• Vgs-th-Max-Id 4.5V @ 50μA
• Gate-Charge-Qg-Vgs 6.9nC @ 10V
• Pd-Power-Dissipation 3.3 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 18 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 300 mA
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 15 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 13 ns
• Typical-Turn-On-Delay-Time 5.5 ns
• Qg-Gate-Charge 4.9 nC
• Forward-Transconductance-Min 0.5 S
• Channel-Mode Enhancement

STN1NK60Z FAQ

• A: What is the Series of the product?

  Q: The Series of the product is SuperMESH.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.004395 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-261-4, TO-261AA.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed SOT-223

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single Dual Drain.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 600V

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 94pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 300mA (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 15 Ohm @ 400mA, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 3.3 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 18 ns.

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 5 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 300 mA.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 15 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 13 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 5.5 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 4.9 nC.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 0.5 S.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.