STP210N75F6

Mfr. #: STP210N75F6
メーカー: STMicroelectronics
説明: IGBT Transistors MOSFET N-Ch 75V 3mOhm 120A STripFET VI
ライフサイクル: メーカー新製品
データシート: STP210N75F6 データシート
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP210N75F6 Overview

Product belongs to the STP210N75F6 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 300 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The 3.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 171 nC.

STP210N75F6 Image

STP210N75F6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP210N75F6 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STP210N75F6
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 300 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 120 A
  • Vds-Drain-Source-Breakdown-Voltage 75 V
  • Rds-On-Drain-Source-Resistance 3.7 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 171 nC

STP210N75F6

STP210N75F6 Specifications

STP210N75F6 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STP210N75F6.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 300 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 175 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 120 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 3.7 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 171 nC

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