STP30N10F7

Mfr. #: STP30N10F7
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 100V 32A TO220AB
Lifecycle: New from this manufacturer.
Datasheet: STP30N10F7 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP30N10F7 Overview

Tube is the packaging method for this product Through Hole Mounting-Style TO-220 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Transistor type: 1 N-Channel Power-off control: 50 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 5.6 ns of 16 ns. This product has a 17.5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 32 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22 ns This product has a 12 ns. Qg-Gate-Charge is 19 nC. This product features a - of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.

STP30N10F7 Image

STP30N10F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP30N10F7 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-220
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration 1 N-Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 50 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 5.6 ns
  • Rise-Time 17.5 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 32 A
  • Vds-Drain-Source-Breakdown-Voltage 100 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
  • Rds-On-Drain-Source-Resistance 24 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 22 ns
  • Typical-Turn-On-Delay-Time 12 ns
  • Qg-Gate-Charge 19 nC
  • Forward-Transconductance-Min -
  • Channel-Mode Enhancement
  • Development-Kit -

STP30N10F7

STP30N10F7 Specifications

STP30N10F7 FAQ
  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-220.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is 1 N-Channel.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 50 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 5.6 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 17.5 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 32 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4.5 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 24 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 22 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 12 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 19 nC

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is -.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

  • A: What is the Development-Kit of the product?

    Q: The Development-Kit of the product is -.

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