| Mfr. #: | STP30N10F7 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-CH 100V 32A TO220AB |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STP30N10F7 Datasheet |


Tube is the packaging method for this product Through Hole Mounting-Style TO-220 Si is the technology used. Number of channels: 1 Channel Configuration 1 N-Channel Transistor type: 1 N-Channel Power-off control: 50 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 5.6 ns of 16 ns. This product has a 17.5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 32 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 24 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 22 ns This product has a 12 ns. Qg-Gate-Charge is 19 nC. This product features a - of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP30N10F7 Specifications
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is 1 N-Channel.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 50 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 5.6 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 17.5 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 32 A
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 100 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4.5 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 24 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 22 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 12 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 19 nC
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is -.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.
A: What is the Development-Kit of the product?
Q: The Development-Kit of the product is -.