STP310N10F7

STP310N10F7 Overview

Product belongs to the DeepGATE, STripFET VII series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 100V This product has an 12800pF @ 25V value of 300pF @ 25V. This product's Standard. 180A (Tc) continuous drain-ID current at 25°C; This product has an 2.7 mOhm @ 60A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 315 W This product's 20 V. The ID of continuous drain current is 180 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 2.7 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 180 nC.

STP310N10F7 Image

STP310N10F7 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series DeepGATE, STripFET VII
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Supplier-Device-Package TO-220
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 315W
• Drain-to-Source-Voltage-Vdss 100V
• Input-Capacitance-Ciss-Vds 12800pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 180A (Tc)
• Rds-On-Max-Id-Vgs 2.7 mOhm @ 60A, 10V
• Vgs-th-Max-Id 3.8V @ 250μA
• Gate-Charge-Qg-Vgs 180nC @ 10V
• Pd-Power-Dissipation 315 W
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 180 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Rds-On-Drain-Source-Resistance 2.7 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 180 nC

STP310N10F7 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is DeepGATE, STripFET VII.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 100V

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 12800pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 180A (Tc).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 2.7 mOhm @ 60A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 315 W.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 180 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 2.7 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 180 nC