STP4N52K3

STP4N52K3 Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 20 W This product has a 14 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 525 V. This product has a 3.75 V Vgs-th gate-source threshold voltage for efficient power management. The 2.1 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 11 nC.

STP4N52K3 Image

STP4N52K3 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 20 W
• Fall-Time 14 ns
• Rise-Time 7 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 2.5 A
• Vds-Drain-Source-Breakdown-Voltage 525 V
• Vgs-th-Gate-Source-Threshold-Voltage 3.75 V
• Rds-On-Drain-Source-Resistance 2.1 Ohms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 11 nC

STP4N52K3 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel MDmesh.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 20 W

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 14 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 7 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 2.5 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 525 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3.75 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 2.1 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 11 nC