STP7N80K5

STP7N80K5 Overview

Product belongs to the SuperMESH5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Supplier device package: TO-220 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 800V This product has an 360pF @ 100V value of 300pF @ 25V. This product's Standard. 6A (Tc) continuous drain-ID current at 25°C; This product has an 1.2 Ohm @ 3A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20.2 ns of 16 ns. This product has a 8.3 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11.3 ns This product has a 23.7 ns. Qg-Gate-Charge is 13.4 nC.

STP7N80K5 Image

STP7N80K5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH5
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Supplier-Device-Package TO-220
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 110W
• Drain-to-Source-Voltage-Vdss 800V
• Input-Capacitance-Ciss-Vds 360pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 6A (Tc)
• Rds-On-Max-Id-Vgs 1.2 Ohm @ 3A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 13.4nC @ 10V
• Pd-Power-Dissipation 110 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20.2 ns
• Rise-Time 8.3 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 6 A
• Vds-Drain-Source-Breakdown-Voltage 800 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 1.2 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 11.3 ns
• Typical-Turn-On-Delay-Time 23.7 ns
• Qg-Gate-Charge 13.4 nC

STP7N80K5 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH5

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.011640 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 800V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 360pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 6A (Tc).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 1.2 Ohm @ 3A, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 20.2 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 8.3 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 6 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V

• A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

  Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 4 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 1.2 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11.3 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 23.7 ns

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 13.4 nC.