STS8C5H30L

Mfr. #: STS8C5H30L
Manufacturer: STMicroelectronics
Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Lifecycle: New from this manufacturer.
Datasheet: STS8C5H30L Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STS8C5H30L Overview

Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002998 oz SMD/SMT Mounting-Style 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SO Configuration Dual Dual Drain This product uses an N and P-Channel FET-Type transistor. Transistor type: 1 N-Channel 1 P-Channel 30V This product has an 857pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 8A, 5.4A continuous drain-ID current at 25°C; This product has an 22 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns 35 ns of 16 ns. This product has a 14.5 ns 35 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 22 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel P-Channel. 'Typical-Turn-Off-Delay-Time' of 23 ns 125 ns This product has a 12 ns 25 ns. Qg-Gate-Charge is 7 nC. This product features a 8.5 S 10 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STS8C5H30L Image

STS8C5H30L

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STS8C5H30L Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Arrays
  • Series STripFET III
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.002998 oz
  • Mounting-Style SMD/SMT
  • Package-Case 8-SOIC (0.154", 3.90mm Width)
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 2 Channel
  • Supplier-Device-Package 8-SO
  • Configuration Dual Dual Drain
  • FET-Type N and P-Channel
  • Power-Max 2W
  • Transistor-Type 1 N-Channel 1 P-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 857pF @ 25V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 8A, 5.4A
  • Rds-On-Max-Id-Vgs 22 mOhm @ 4A, 10V
  • Vgs-th-Max-Id 1V @ 250μA
  • Gate-Charge-Qg-Vgs 10nC @ 5V
  • Pd-Power-Dissipation 2 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8 ns 35 ns
  • Rise-Time 14.5 ns 35 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 8 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.5 V
  • Rds-On-Drain-Source-Resistance 22 mOhms
  • Transistor-Polarity N-Channel P-Channel
  • Typical-Turn-Off-Delay-Time 23 ns 125 ns
  • Typical-Turn-On-Delay-Time 12 ns 25 ns
  • Qg-Gate-Charge 7 nC
  • Forward-Transconductance-Min 8.5 S 10 S
  • Channel-Mode Enhancement

STS8C5H30L

STS8C5H30L Specifications

STS8C5H30L FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STripFET III.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.002998 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 8-SOIC (0.154", 3.90mm Width)

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 2 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 8-SO.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual Dual Drain.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is N and P-Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel 1 P-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 857pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Logic Level Gate.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 8A, 5.4A

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 22 mOhm @ 4A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 8 ns 35 ns

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 14.5 ns 35 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 8 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 22 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel P-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 23 ns 125 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 12 ns 25 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 7 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 8.5 S 10 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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Ext. Price
1
$0.38
$0.38
10
$0.36
$3.64
100
$0.34
$34.47
500
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$162.75
1000
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