| Mfr. #: | STS8C5H30L |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N/P-CH 30V 8A/5.4A 8SOIC |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STS8C5H30L Datasheet |


Product belongs to the STripFET III series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.002998 oz SMD/SMT Mounting-Style 8-SOIC (0.154", 3.90mm Width) Si is the technology used. Operational temperature range: 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-SO Configuration Dual Dual Drain This product uses an N and P-Channel FET-Type transistor. Transistor type: 1 N-Channel 1 P-Channel 30V This product has an 857pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 8A, 5.4A continuous drain-ID current at 25°C; This product has an 22 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns 35 ns of 16 ns. This product has a 14.5 ns 35 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 22 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel P-Channel. 'Typical-Turn-Off-Delay-Time' of 23 ns 125 ns This product has a 12 ns 25 ns. Qg-Gate-Charge is 7 nC. This product features a 8.5 S 10 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STS8C5H30L Specifications
A: What is the Series of the product?
Q: The Series of the product is STripFET III.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.002998 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed 8-SOIC (0.154", 3.90mm Width)
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 2 Channel.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 8-SO.
A: At what frequency does the Configuration?
Q: The product Configuration is Dual Dual Drain.
A: What is the FET-Type of the product?
Q: The FET-Type of the product is N and P-Channel.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel 1 P-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 857pF @ 25V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Logic Level Gate.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 8A, 5.4A
A: At what frequency does the Rds-On-Max-Id-Vgs?
Q: The product Rds-On-Max-Id-Vgs is 22 mOhm @ 4A, 10V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 8 ns 35 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 14.5 ns 35 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 16 V
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 8 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 22 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel P-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 23 ns 125 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 12 ns 25 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 7 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 8.5 S 10 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement