STU16N65M2

Mfr. #: STU16N65M2
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK
Lifecycle: New from this manufacturer.
Datasheet: STU16N65M2 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STU16N65M2 Overview

Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 11.3 ns of 16 ns. This product has a 8.2 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 360 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 36 ns This product has a 11.3 ns. Qg-Gate-Charge is 19.5 nC. This product operates in Enhancement channel mode for optimal performance.

STU16N65M2 Image

STU16N65M2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU16N65M2 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh M2
  • Packaging Tube
  • Unit-Weight 0.139332 oz
  • Mounting-Style Through Hole
  • Package-Case IPAK-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 11.3 ns
  • Rise-Time 8.2 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 11 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2 V
  • Rds-On-Drain-Source-Resistance 360 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 36 ns
  • Typical-Turn-On-Delay-Time 11.3 ns
  • Qg-Gate-Charge 19.5 nC
  • Channel-Mode Enhancement

STU16N65M2

STU16N65M2 Specifications

STU16N65M2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh M2.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is IPAK-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 110 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 11.3 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 8.2 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 11 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 360 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 36 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 11.3 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 19.5 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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