| Mfr. #: | STU5N95K3 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | IGBT Transistors MOSFET POWER MOSFET N-CH 950V 4 A |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STU5N95K3 Datasheet |


Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.139332 oz Through Hole Mounting-Style IPAK-3 Si is the technology used. Power-off control: 90 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 950 V. The 3 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 32 ns This product has a 17 ns. Qg-Gate-Charge is 19 nC.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STU5N95K3 Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel MDmesh.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.139332 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed IPAK-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 90 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 18 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 7 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 30 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 4 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 950 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 3 Ohms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 32 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 19 nC.