| Mfr. #: | STW11NM80 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | MOSFET N-CH 800V 11A TO-247 |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STW11NM80 Datasheet |
Product belongs to the MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -65°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 1630pF @ 25V value of 300pF @ 25V. This product's Standard. 11A (Tc) continuous drain-ID current at 25°C; This product has an 400 mOhm @ 5.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C This product has a 15 ns of 16 ns. This product has a 17 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 400 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 46 ns This product has a 22 ns. This product features a 8 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW11NM80 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -65°C ~ 150°C (TJ).
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-247-3.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: At what frequency does the FET-Type?
Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 800V
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 1630pF @ 25V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 11A (Tc).
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 400 mOhm @ 5.5A, 10V
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 150 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 15 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 17 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 11 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 800 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 400 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 46 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 22 ns.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 8 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.