STW12N150K5

STW12N150K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 1500V (1.5kV) This product has an 1360pF @ 100V value of 300pF @ 25V. This product's Standard. 7A (Tc) continuous drain-ID current at 25°C; This product has an 1.9 Ohm @ 3.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 250 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 8 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1.5 kV. This product has a 3 V to 5 V Vgs-th gate-source threshold voltage for efficient power management. The 1.9 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 90 ns This product has a 25 ns. Qg-Gate-Charge is 47 nC. This product operates in Enhancement channel mode for optimal performance.

STW12N150K5 Image

STW12N150K5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh K5
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 250W
• Drain-to-Source-Voltage-Vdss 1500V (1.5kV)
• Input-Capacitance-Ciss-Vds 1360pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 7A (Tc)
• Rds-On-Max-Id-Vgs 1.9 Ohm @ 3.5A, 10V
• Vgs-th-Max-Id 5V @ 100μA
• Gate-Charge-Qg-Vgs 47nC @ 10V
• Pd-Power-Dissipation 250 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 37 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage +/- 30 V
• Id-Continuous-Drain-Current 7 A
• Vds-Drain-Source-Breakdown-Voltage 1.5 kV
• Vgs-th-Gate-Source-Threshold-Voltage 3 V to 5 V
• Rds-On-Drain-Source-Resistance 1.9 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 90 ns
• Typical-Turn-On-Delay-Time 25 ns
• Qg-Gate-Charge 47 nC
• Channel-Mode Enhancement

STW12N150K5 FAQ

• A: At what frequency does the Series?

  Q: The product Series is MDmesh K5.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 1.340411 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-247-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 1500V (1.5kV).

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 1360pF @ 100V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 7A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 1.9 Ohm @ 3.5A, 10V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 37 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 8 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is +/- 30 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 7 A

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1.5 kV.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 3 V to 5 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 1.9 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 90 ns

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 25 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 47 nC

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.