STW13NK100Z

STW13NK100Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1000V (1kV) This product has an 6000pF @ 25V value of 300pF @ 25V. This product's Standard. 13A (Tc) continuous drain-ID current at 25°C; This product has an 700 mOhm @ 6.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 350 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 45 ns of 16 ns. This product has a 35 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1000 V. The 700 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 145 ns This product has a 45 ns. Qg-Gate-Charge is 190 nC. This product operates in Enhancement channel mode for optimal performance.

STW13NK100Z Image

STW13NK100Z Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series SuperMESH
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-247-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 350W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 1000V (1kV)
• Input-Capacitance-Ciss-Vds 6000pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 13A (Tc)
• Rds-On-Max-Id-Vgs 700 mOhm @ 6.5A, 10V
• Vgs-th-Max-Id 4.5V @ 150μA
• Gate-Charge-Qg-Vgs 266nC @ 10V
• Pd-Power-Dissipation 350 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 45 ns
• Rise-Time 35 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 13 A
• Vds-Drain-Source-Breakdown-Voltage 1000 V
• Rds-On-Drain-Source-Resistance 700 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 145 ns
• Typical-Turn-On-Delay-Time 45 ns
• Qg-Gate-Charge 190 nC
• Channel-Mode Enhancement

STW13NK100Z FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed SuperMESH

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-247-3.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 1000V (1kV).

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 6000pF @ 25V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

  Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 13A (Tc)

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 700 mOhm @ 6.5A, 10V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 350 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 45 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 35 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 13 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 1000 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 700 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 145 ns

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 45 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 190 nC

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.