STW18NM60ND

Mfr. #: STW18NM60ND
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO-247
Lifecycle: New from this manufacturer.
Datasheet: STW18NM60ND Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW18NM60ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 130 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 18 ns of 16 ns. This product has a 15.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 290 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 55 ns. Qg-Gate-Charge is 34 nC.

STW18NM60ND Image

STW18NM60ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW18NM60ND Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 18 ns
  • Rise-Time 15.5 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 13 A
  • Vds-Drain-Source-Breakdown-Voltage 650 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 290 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 55 ns
  • Qg-Gate-Charge 34 nC

STW18NM60ND

STW18NM60ND Specifications

STW18NM60ND FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel MDmesh

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 1.340411 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 130 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 18 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 15.5 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 25 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 13 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 290 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 13 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 55 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 34 nC

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