STW27NM60ND

STW27NM60ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 130 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW27NM60ND Image

STW27NM60ND Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series N-channel MDmesh
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Id-Continuous-Drain-Current 21 A
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Rds-On-Drain-Source-Resistance 130 mOhms
• Transistor-Polarity N-Channel

STW27NM60ND FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel MDmesh

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-247-3.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 21 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 130 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.