| Mfr. #: | STW7N105K5 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | IGBT Transistors MOSFET POWER MOSFET |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | STW7N105K5 Datasheet |
Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 25 ns of 16 ns. This product has a 7 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1050 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 2 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17.5 ns. Qg-Gate-Charge is 17 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW7N105K5 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh K5.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 1.340411 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 25 ns
A: What is the Rise-Time of the product?
Q: The Rise-Time of the product is 7 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 30 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 1050 V.
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 3 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2 Ohms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 43 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 17.5 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 17 nC.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement