| Mfr. #: | TIP35CW |
|---|---|
| Manufacturer: | STMicroelectronics |
| Description: | Bipolar Transistors - BJT HIGH POWER TRANS |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | TIP35CW Datasheet |
Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Through Hole mounting type Supplier device package: TO-247-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 25A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 10 @ 15A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 4V @ 5A, 25A Power-off control: 125000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 100 V The transistor polarity is NPN PNP. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 A Gain-Bandwidth-Product: 3 MHz Minimum hfe for DC collector-base gain is 25.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TIP35CW Specifications
A: At what frequency does the Series?
Q: The product Series is 500V Transistors.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-247-3.
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-247-3.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 25A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 10 @ 15A, 4V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 4V @ 5A, 25A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 125000 mW
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 65 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 100 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is NPN PNP.
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 100 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 25 A.
A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?
Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 3 MHz
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 25