| Mfr. #: | VN0109N3-G |
|---|---|
| Manufacturer: | Microchip Technology |
| Description: | IGBT Transistors MOSFET MOSFET N-CHANNEL ENHANCE-MODE 90V |
| Lifecycle: | New from this manufacturer. |
| Datasheet: | VN0109N3-G Datasheet |


Bulk is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-92-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C The ID of continuous drain current is 350 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 90 V. The 5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

VN0109N3-G Specifications
A: What is the Packaging of the product?
Q: The Packaging of the product is Bulk.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.016000 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-92-3
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 350 mA.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 90 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5 Ohms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.