VP2206N2

Mfr. #: VP2206N2
Manufacturer: Microchip Technology
Description: RF Bipolar Transistors MOSFET 60V 0.9Ohm
Lifecycle: New from this manufacturer.
Datasheet: VP2206N2 Datasheet
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
VP2206N2 Overview

Product belongs to the - series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-205AD, TO-39-3 Metal Can Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-39 Configuration Single This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 60V This product has an 450pF @ 25V value of 300pF @ 25V. This product's Standard. 750mA (Tj) continuous drain-ID current at 25°C; This product has an 900 mOhm @ 3.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 22 ns of 16 ns. This product has a 16 ns of 16 ns. This product's 20 V. The ID of continuous drain current is - 750 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof - 60 V. The 900 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 16 ns This product has a 4 ns. This product operates in Enhancement channel mode for optimal performance.

VP2206N2 Image

VP2206N2

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

VP2206N2 Specifications
  • Manufacturer Microchip Technology
  • Product Category FETs - Single
  • Series -
  • Packaging Bulk
  • Mounting-Style Through Hole
  • Package-Case TO-205AD, TO-39-3 Metal Can
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-39
  • Configuration Single
  • FET-Type MOSFET P-Channel, Metal Oxide
  • Power-Max 6W
  • Transistor-Type 1 P-Channel
  • Drain-to-Source-Voltage-Vdss 60V
  • Input-Capacitance-Ciss-Vds 450pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 750mA (Tj)
  • Rds-On-Max-Id-Vgs 900 mOhm @ 3.5A, 10V
  • Vgs-th-Max-Id 3.5V @ 10mA
  • Gate-Charge-Qg-Vgs -
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 22 ns
  • Rise-Time 16 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current - 750 mA
  • Vds-Drain-Source-Breakdown-Voltage - 60 V
  • Rds-On-Drain-Source-Resistance 900 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 16 ns
  • Typical-Turn-On-Delay-Time 4 ns
  • Channel-Mode Enhancement

VP2206N2

VP2206N2 Specifications

VP2206N2 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is -.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Bulk

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-205AD, TO-39-3 Metal Can

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-39

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET P-Channel, Metal Oxide

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 450pF @ 25V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 750mA (Tj)

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 900 mOhm @ 3.5A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 6 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 22 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 16 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is - 750 mA.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 60 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 900 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 16 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 4 ns

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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