BSC0921NDIATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TISON-8

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

40 A

Rds On - Drain-Source Resistance:

3.9 mOhms, 1.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

8.9 nC, 33 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Dual

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

1.27 mm

Length:

5.9 mm

Transistor Type:

2 N-Channel

Width:

5.15 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

38 S, 70 S

Fall Time:

2.4 ns, 3.6 ns

Product Type:

MOSFET

Rise Time:

3.4 ns, 5 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

12 ns, 25 ns

Typical Turn-On Delay Time:

1.8 ns, 5 ns

Part # Aliases:

BSC0921NDI BSC921NDIXT SP000934748

Tags

BSC092, BSC09, BSC0, BSC