TGF2023-2-01

TGF2023-2-01
Mfr. #:
TGF2023-2-01
メーカー:
Qorvo
説明:
RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
ライフサイクル:
メーカー新製品
データシート:
TGF2023-2-01 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
TGF2023-2-01 詳しくは
製品属性
属性値
メーカー
TriQuint(Qorvo)
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
TGF
包装
ジェルパック
パーツエイリアス
1099624
パッケージ-ケース
死ぬ
テクノロジー
GaN SiC
トランジスタタイプ
HEMT
トランジスタ-極性
Nチャネル
Tags
TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF POWER TRANSISTOR
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
モデル メーカー 説明 ストック 価格
TGF2023-2-01
DISTI # 772-TGF2023-2-01
QorvoRF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
RoHS: Compliant
0
  • 50:$30.2800
  • 100:$26.1900
  • 250:$24.6200
画像 モデル 説明
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Mfr.#: TGF2025

OMO.#: OMO-TGF2025-318

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Mfr.#: TGF2022-60

OMO.#: OMO-TGF2022-60-318

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Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

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TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
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Mfr.#: TGF2021-04-SG

OMO.#: OMO-TGF2021-04-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm
TGF2021-04SD

Mfr.#: TGF2021-04SD

OMO.#: OMO-TGF2021-04SD-1190

ブランドニューオリジナル
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
TGF2023-2-01の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$36.93
$36.93
10
$35.08
$350.84
100
$33.24
$3 323.70
500
$31.39
$15 695.25
1000
$29.54
$29 544.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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