STW50N65DM2AG

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

38 A

Rds On - Drain-Source Resistance:

87 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

70 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

MDmesh

Height:

5.15 mm

Length:

20.15 mm

Product:

Power MOSFET

Series:

STW50N65DM2AG

Transistor Type:

1 N-Channel

Type:

High Voltage

Width:

15.75 mm

Brand:

STMicroelectronics

Fall Time:

10.5 ns

Product Type:

MOSFET

Rise Time:

21 ns

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

89 ns

Typical Turn-On Delay Time:

22.5 ns

Unit Weight:

1.340411 oz

Tags

STW50N, STW50, STW5, STW