SIS782DN-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

16 A

Rds On - Drain-Source Resistance:

9.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

30.5 nC

Minimum Operating Temperature:

- 50 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

41 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Height:

1.04 mm

Length:

3.3 mm

Series:

SIS

Transistor Type:

1 N-Channel

Width:

3.3 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

43 S

Fall Time:

11 ns

Product Type:

MOSFET

Rise Time:

22 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

SIS782DN-GE3

Tags

SIS782, SIS78, SIS7, SIS