IXTT75N10L2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

75 A

Rds On - Drain-Source Resistance:

21 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

215 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

400 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

IXTT75N10

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

53 S, 35 S

Fall Time:

15 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

68 ns

Typical Turn-On Delay Time:

23 ns

Unit Weight:

0.229281 oz

Tags

IXTT75N1, IXTT75, IXTT7, IXTT, IXT